Analyzing method

ABSTRACT

A method includes providing a jig including a predetermined center and a magnetron installed on the jig; rotating the magnetron and obtaining a measured first magnetic flux density at the predetermined center of the jig; defining a first area of the magnetron based on the measured first magnetic flux density; rotating the magnetron and measuring a plurality of second magnetic flux densities within the first area of the magnetron; deriving a measured second magnetic flux density among the plurality of second magnetic flux densities; comparing the measured second magnetic flux density with a predetermined threshold; and performing an operation based on the comparison.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefit of provisional application Ser.62/771,835 filed on Nov. 27, 2018, entitled “A METHOD OF ANALYZING AMANUFACTURING APPARATUS,” the disclosure of which is hereby incorporatedby reference in its entirety.

BACKGROUND

With the advancement of electronic technology, semiconductor device isbecoming increasingly smaller in size while having greater functionalityand greater amounts of integrated circuitry. Due to the miniaturizedscale of the semiconductor device, a number of semiconductor componentsare assembled on the semiconductor device. Furthermore, numerousmanufacturing operations are implemented within such a smallsemiconductor device.

Prior to fabrication of the semiconductor device, calibration of amanufacturing apparatus is performed. Components of the manufacturingapparatus have to undergo tuning or adjustment for the purpose offabrication stability and repeatability. The manufacturing operationscan be repeatedly implemented on each of the semiconductor devices, andsemiconductor components can be accurately assembled on thesemiconductor device. However, the calibration of the manufacturingapparatus is dependent on accuracy of data associated with physicalproperties of each component of the manufacturing apparatus (i.e.dimension, coefficient of thermal expansion, life span, hardness, etc.).As such, stability of the manufacturing apparatus and manufacturingrepeatability of the semiconductor device may encounter challenges.

Therefore, there is a continuous need to modify and improve thefabrication of the semiconductor device and the manufacturing apparatusfor fabricating the semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a schematic cross sectional view of a manufacturing apparatusin accordance with some embodiments of the present disclosure.

FIG. 2 is a flow diagram of a method of analyzing a manufacturingapparatus in accordance with some embodiments of the present disclosure.

FIGS. 3-4 are schematic cross sectional views of analyzing amanufacturing apparatus by a method of FIG. 2 in accordance with someembodiments of the present disclosure.

FIG. 5 is a flow diagram of a method of analyzing a manufacturingapparatus in accordance with some embodiments of the present disclosure.

FIG. 6 is a schematic cross sectional view of analyzing a manufacturingapparatus by a method of FIG. 5 in accordance with some embodiments ofthe present disclosure.

DETAILED DESCRIPTION OF THE DISCLOSURE

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

A semiconductor structure is manufactured by a number of operations. Theoperations are performed by manufacturing apparatuses. Calibration ofthe manufacturing apparatus is performed before the performance of theoperations. The calibration is performed based on the data associatedwith physical properties of each component of the manufacturingapparatus (i.e. dimension, coefficient of thermal expansion, life span,hardness, etc.). However, measurement of those physical properties maynot be accurate. Those data may have some deviations. For example,profiles of a magnetron and a sputtering target in a sputter may not beaccurately derived, and thus sputtering over the semiconductor structuremay not be implemented repeatedly and stably.

In the present disclosure, a method of analyzing a manufacturingapparatus is disclosed. The method includes providing a jig including apredetermined center and a magnetron installed on the jig; rotating themagnetron and obtaining a measured first magnetic flux density at thepredetermined center of the jig; defining a first area of the magnetronbased on the measured first magnetic flux density; rotating themagnetron and measuring a plurality of second magnetic flux densitieswithin the first area of the magnetron; deriving a measured secondmagnetic flux density among the plurality of second magnetic fluxdensities; comparing the measured second magnetic flux density with apredetermined threshold; and performing an operation based on thecomparison. A position of a center of the magnetron used in a sputtercan be accurately obtained based on the method.

In the present disclosure, another method of analyzing a manufacturingapparatus is disclosed. The method includes providing a jig including apredetermined center and a sputtering target installed on the jig;defining a first area of the jig around the predetermined center;measuring a plurality of first depths within the first area of the jig;deriving a maximum first depth among the plurality of first depths;defining a second area of the jig around the maximum first depth of thejig; measuring a plurality of second depths within the second area ofthe jig; deriving a maximum second depth among the plurality of seconddepths; comparing the maximum first depth with the maximum second depth;and performing an operation based on the comparison. A position of acenter of the sputtering target used in a sputter can be accuratelyobtained based on the method.

Therefore, repeatability and stability of manufacturing of thesemiconductor structure by the sputter can be improved. A reliability ofthe semiconductor structure can also be improved.

FIG. 1 is a schematic view of an apparatus 100 in accordance withvarious embodiments of the present disclosure. In some embodiments, theapparatus 100 includes a magnetron 101, a sputtering target 102, a stage103 and a substrate 104. In some embodiments, the apparatus 100 isconfigured to perform sputtering operations. In some embodiments, theapparatus 100 is configured to perform physical vapor deposition (PVD)operations. In some embodiments, the apparatus 100 is configured toperform deposition of a coating 102 a over the substrate 104. In someembodiments, the apparatus 100 is a sputter.

In some embodiments, the magnetron 101 is provided over the sputteringtarget 102. In some embodiments, the magnetron 101 is disposed on thesputtering target 102. In some embodiments, the magnetron 101 isarranged in a close proximity to the sputtering target 102. In someembodiments, the magnetron 101 is physically contacted with thesputtering target 102 or spaced from the sputtering target 102. In someembodiments, the magnetron 101 is configured to provide a magneticfield. In some embodiments, the magnetron 101 is configured to provide amagnetic field around the sputtering target 102.

In some embodiments, the magnetron 101 is a permanent magnet orrotatable magnet. In some embodiments, the magnetron 101 is rotatableabout its center. In some embodiments, the magnetron 101 is electricallyconnected to a voltage. In some embodiments, the magnetron 101 is incircular, elliptical, annular, spiral, irregular or any other suitableshapes.

In some embodiments, the sputtering target 102 is disposed adjacent tothe magnetron 101. In some embodiments, at least a portion of thesputtering target 102 is consumed upon the sputtering operations. Insome embodiments, an atom of the sputtering target 102 is knocked out byan energized ion upon the sputtering operations. In some embodiments,the sputtering target 102 is a piece of material from which the coating102 a over the substrate 104 is to be formed.

In some embodiments, the sputtering target 102 includes conductive orinsulating material. In some embodiments, the sputtering target 102includes a precursor material which can react with a gas to form amolecule from which the coating 102 a deposited over the substrate 104is made. In some embodiments, the sputtering target 102 includes copper,copper oxide, silicon, aluminum, manganese, aluminum nitride, aluminumoxide, etc. In some embodiments, the sputtering target 102 iselectrically connected to a cathode. In some embodiments, the sputteringtarget 102 is in a circular shape.

In some embodiments, the stage 103 is configured to hold the substrate104. In some embodiments, the substrate 104 is attached to the stage103. In some embodiments, the stage 103 is rotatable about its center.

In some embodiments, the substrate 104 is disposed on the stage 103. Insome embodiments, the substrate 104 is rotatable about its center by thestage 103. In some embodiments, the substrate 104 is a wafer. In someembodiments, the substrate 104 includes a circuitry thereover. In someembodiments, the substrate 104 includes electrical components andconductive lines connecting the electrical components. In someembodiments, the substrate 104 is electrically connected to an anode.

Upon the sputtering operations, the magnetron 101 provides a magneticfield around the target 102, and the magnetic field generated from themagnetron energizes ions (such as argon ions or the like) and guides theenergized ions to knock out atoms of the target 102. The atoms of thetarget 102 are then displaced towards the substrate 104, and as a resultthe atoms of the target 102 are sputtered over a surface of thesubstrate 104 to form the coating 102 a on the surface of the substrate104.

In the present disclosure, a method of analyzing a manufacturingapparatus is disclosed. In some embodiments, a component of themanufacturing apparatus is analyzed by a method 200. The method 200includes a number of operations and the description and illustration arenot deemed as a limitation as the sequence of the operations. FIG. 2 isan embodiment of the method 200 of analyzing the component of themanufacturing apparatus. The method 200 includes a number of operations(201, 202, 203, 204, 205, 206 and 207). In some embodiments, the method200 can be automatically performed. In some embodiments, the method 200is implemented in automation. In some embodiments, all components of themanufacturing apparatus involved in the method 200 are integrated andcontrolled by programming in order to automatically perform ameasurement of a center of the magnetron 101.

In operation 201, a first jig 105 and a magnetron 101 are provided asshown in FIG. 3. In some embodiments, the first jig 105 is configured tohold the magnetron 101. In some embodiments, the first jig 105 includesa first recess 105 a for receiving a portion of the magnetron 101, suchthat the magnetron 101 can be temporarily fixed on the first jig 105.

In some embodiments, the first jig 105 includes a first predeterminedcenter 105 b. In some embodiments, the first predetermined center 105 bis a rough or estimated center of the first jig 105 and therefore isdeviated from an exact center of the first jig 105. In some embodiments,the first predetermined center 105 b is substantially equivalent to theexact center of the first jig 105. In some embodiments, a probe isdisplaced towards the first predetermined center 105 b and above themagnetron 101 for subsequent measurement.

In operation 202, the magnetron 101 is rotated and a measured firstmagnetic flux density at the first predetermined center 105 b of thefirst jig 105 is obtained. In some embodiments, the magnetron 101 isrotated about the first predetermined center 105 b. In some embodiments,the magnetron 101 is rotated as an arrow A shown in FIG. 4. In someembodiments, the first magnetic flux density at the first predeterminedcenter 105 b is measured by a probe. In some embodiments, several firstmagnetic flux densities are measured upon the rotation of the magnetron101, and a first maximum magnetic flux density and a first minimummagnetic flux density are obtained among the first magnetic fluxdensities. In some embodiments, the measured first magnetic flux densityis a difference between the first maximum magnetic flux density and thefirst minimum magnetic flux density. In some embodiments, the measuredfirst magnetic flux density is a standard deviation derived from thefirst magnetic flux densities, the first maximum magnetic flux densityand the first minimum magnetic flux density. In some embodiments, themeasured first magnetic flux density is recorded.

In operation 203, a first area of the magnetron 101 based on themeasured first magnetic flux density is defined. In some embodiments,the first area of the magnetron 101 is defined around the firstpredetermined center 105 b. In some embodiments, the first area of themagnetron 101 is defined by outward expansion from the firstpredetermined center 105 b. In some embodiments, a dimension or size ofthe first area of the magnetron 101 is based on a magnitude of themeasured first magnetic flux density obtained in the operation 202. Insome embodiments, the dimension of the first area of the magnetron 101is substantially proportional to the magnitude of the measured firstmagnetic flux density. For example, a relatively large area of themagnetron 101 (e.g. 5 cm×5 cm) is defined if a relatively large measuredfirst magnetic flux density (e.g. 50 Gauss or above) is obtained.

In operation 204, the magnetron 101 is rotated and several secondmagnetic flux densities within the first area of the magnetron 101 aremeasured. In some embodiments, the magnetron 101 is rotated about thefirst predetermined center 105 b. In some embodiments, the secondmagnetic flux densities within the first area of the magnetron 101 aremeasured by a probe. The second magnetic flux densities are obtained byprobing several points within the first area of the magnetron 101. Insome embodiments, the second magnetic flux densities are recorded.

In operation 205, a measured second magnetic flux density is derived. Insome embodiments, several second magnetic flux densities are measuredupon the rotation of the magnetron 101, and a second maximum magneticflux density and a second minimum magnetic flux density are obtainedamong the second magnetic flux densities. In some embodiments, themeasured second magnetic flux density is a difference between the secondmaximum magnetic flux density and the second minimum magnetic fluxdensity. In some embodiments, the measured second magnetic flux densityis a standard deviation derived from the second magnetic flux densities,the second maximum magnetic flux density and the second minimum magneticflux density. In some embodiments, the measured second magnetic fluxdensity is recorded.

In operation 206, the measured second magnetic flux density is comparedwith a predetermined threshold. In some embodiments, the predeterminedthreshold is a magnitude of a magnetic flux density such as zero Gauss,0.3 Gauss, 1 Gauss, 2 Gauss, 5 Gauss, 10 Gauss, 20 Gauss, etc. In someembodiments, the predetermined threshold can be automatically ormanually defined.

In operation 207, an operation is performed based on the comparison (theoperation 206). In some embodiments, if the measured second magneticflux density is equal to or substantially less than the predeterminedthreshold according to the comparison (the operation 206), a position ofthe magnetron 101 having the minimum second magnetic flux density isdefined as a center of the magnetron 101. For example, if the measuredsecond magnetic flux density is equal to or less than 0.2 Gauss, aposition of the magnetron 101 having the minimum second magnetic fluxdensity is defined as a center of the magnetron 101. In someembodiments, the center of the magnetron 101 having the minimum secondmagnetic flux density is an exact center of the magnetron 101. In someembodiments, the center of the magnetron 101 is vertically aligned withor deviated from the first predetermined center 105 b of the jig 105.

In some embodiments, the position of the magnetron 101 defined as thecenter of the magnetron 101 is derived. In some embodiments, acoordinate of the position of the center of the magnetron 101 isobtained and recorded. In some embodiments, the probe is moved to theposition of the center of the magnetron 101 after obtaining thecoordinate of the position of the center of the magnetron 101.

In some embodiments, if the measured second magnetic flux density issubstantially greater than the predetermined threshold according to thecomparison (the operation 206), the operations 203, 204, 205 and 206 arerepeated. In some embodiments, after the comparison (the operation 206),a second area of the magnetron 101 based on the measured second magneticflux density obtained in the operation 205 is defined. In someembodiments, the second area of the magnetron 101 is substantiallylarger than the first area of the magnetron 101 defined in the operation203.

In some embodiments, the second area of the magnetron 101 is defined byexpanding the first area of the magnetron 101. In some embodiments, adimension or size of the second area of the magnetron 101 is based on amagnitude of the measured second magnetic flux density. In someembodiments, the dimension of the second area of the magnetron 101 issubstantially proportional to the magnitude of the measured secondmagnetic flux density. In some embodiments, the first area of themagnetron 101 is expanded or shrunken to the second area of themagnetron 101. In some embodiments, the first area of the magnetron 101is same as the second area of the magnetron 101. For example, if thedifference between the measured second magnetic flux density and thepredetermined threshold is relatively large (e.g. 50 Gauss or above),expansion of the first area becomes larger (e.g. expanding from thefirst area with 5 cm×5 cm to the second area with 10 cm×10 cm). Forexample, if the difference between the measured second magnetic fluxdensity and the predetermined threshold is relatively small (e.g. lessthan 10 Guass), expansion of the first area becomes smaller (e.g.expanding from the first area with 5 cm×5 cm to the second area with 7cm×7 cm). In some embodiments, the definition of the second area of themagnetron 101 is similar to the operation 203.

In some embodiments, after defining the second area of the magnetron101, the magnetron 101 is rotated and several third magnetic fluxdensities within the second area of the magnetron 101 are measured. Insome embodiments, the magnetron 101 is rotated about the firstpredetermined center 105 b. In some embodiments, the third magnetic fluxdensities within the second area of the magnetron 101 are measured by aprobe. The third magnetic flux densities are obtained by probing severalpoints within the second area of the magnetron 101. In some embodiments,the third magnetic flux densities are recorded. In some embodiments, themeasurement of the third magnetic flux densities is similar to theoperation 204.

In some embodiments, after the measurement of the third magnetic fluxdensities, a measured third magnetic flux density is obtained. In someembodiments, several third magnetic flux densities are measured upon therotation of the magnetron 101, and a third maximum magnetic flux densityand a third minimum magnetic flux density are obtained among the thirdmagnetic flux densities. In some embodiments, the measured thirdmagnetic flux density is a difference between the third maximum magneticflux density and the third minimum magnetic flux density. In someembodiments, the measured third magnetic flux density is a standarddeviation derived from the third magnetic flux densities, the thirdmaximum magnetic flux density and the third minimum magnetic fluxdensity. In some embodiments, the deriving of the measured thirdmagnetic flux density is similar to the operation 205. In someembodiments, the measured third magnetic flux density is recorded.

In some embodiments, after deriving the measured third magnetic fluxdensity, the measured third magnetic flux density is compared with thepredetermined threshold. In some embodiments, the comparison is similarto the operation 206.

In some embodiments, if the measured third magnetic flux density isequal to or substantially less than the predetermined threshold, aposition of the magnetron 101 having the minimum third magnetic fluxdensity is defined as a center of the magnetron 101. In someembodiments, the center of the magnetron 101 having the minimum thirdmagnetic flux density is an exact center of the magnetron 101. In someembodiments, the center of the magnetron 101 is vertically aligned withor deviated from the first predetermined center 105 b of the jig 105.

In some embodiments, the position of the magnetron 101 defined as thecenter of the magnetron 101 is derived. In some embodiments, acoordinate of the position of the center of the magnetron 101 isobtained and recorded. In some embodiments, the probe is moved to theposition of the center of the magnetron 101 after obtaining thecoordinate of the position of the center of the magnetron 101.

In some embodiments, if the measured third magnetic flux density issubstantially greater than the predetermined threshold, the operations203, 204, 205 and 206 are repeated again. The operations are terminatedwhen an exact center of the magnetron 101 was found.

In the present disclosure, a method of analyzing a manufacturingapparatus is disclosed. In some embodiments, a component of themanufacturing apparatus is analyzed by a method 300. The method 300includes a number of operations and the description and illustration arenot deemed as a limitation as the sequence of the operations. FIG. 5 isan embodiment of the method 300 of analyzing the component of themanufacturing apparatus. The method 300 includes a number of operations(301, 302, 303, 304, 305, 306, 307, 308 and 309). In some embodiments,the method 300 can be automatically performed. In some embodiments, themethod 300 is implemented in automation. In some embodiments, allcomponents of the manufacturing apparatus involved in the method 300 areintegrated and controlled by programming in order to automaticallyperform a measurement of a center of the sputtering target 102.

In operation 301, a second jig 106 and a sputtering target 102 areprovided as shown in FIG. 6. In some embodiments, the second jig 106 isconfigured to hold the sputtering target 102. In some embodiments, thesecond jig 106 includes a second recess 106 a for receiving a portion ofthe sputtering target 102, such that the sputtering target can betemporarily fixed on the second jig 106.

In some embodiments, the second jig 106 includes a second predeterminedcenter 106 b. In some embodiments, the second predetermined center 106 bis a rough center of the second jig 106 and therefore is deviated froman exact center of the second jig 106. In some embodiments, the secondpredetermined center 106 b is substantially equivalent to the exactcenter of the second jig 106. In some embodiments, a probe is displacedtowards the second predetermined center 106 b for subsequentmeasurement.

In operation 302, a first area of the second jig 106 is defined. In someembodiments, the first area of the second jig 106 is defined around thesecond predetermined center 106 b. In some embodiments, the first areaof the second jig 106 is defined by outward expansion from the secondpredetermined center 106 b.

In operation 303, several first depths within the first area of thesecond jig 106 are measured. In some embodiments, the first depths aremeasured by a probe. The first depths are obtained by probing severalpoints within the first area of the second jig 106. In some embodiments,the first depths are recorded.

In operation 304, a maximum first depth among the first depths isderived. In some embodiments, the maximum first depth is determinedafter the measurement of the first depths. In some embodiments, aposition of the second jig 106 having the maximum first depth is alsoderived. In some embodiments, the maximum first depth is recorded.

In operation 305, a second area of the second jig 106 is defined. Insome embodiments, the second area of the second jig 106 is definedaround the maximum first depth of the second jig 106. In someembodiments, the first area of the second jig 106 is substantiallygreater than, smaller than or equal to the second area of the second jig106. In some embodiments, the second area of the jig 106 is defined bycontracting the first area of the second jig 106. In some embodiments,the first area and the second area of the second jig 106 are at leastpartially overlapped with each other. In some embodiments, expansion orshrinkage of the first area to the second area is based on a magnitudeof the maximum first depth.

In operation 306, several second depths within the second area of thesecond jig 106 are measured. In some embodiments, the second depths aremeasured by a probe. The second depths are obtained by probing severalpoints within the second area of the second jig 106. In someembodiments, the second depths are recorded.

In operation 307, a maximum second depth among the second depths isderived. In some embodiments, the maximum second depth is determinedafter the measurement of the second depths. In some embodiments, aposition of the second jig 106 having the maximum second depth is alsoderived. In some embodiments, the maximum second depth is recorded.

In operation 308, the maximum first depth is compared with the maximumsecond depth. In some embodiments, the comparison can determine if amaximum depth of the second jig 106 was found.

In operation 309, an operation is performed based on the comparison (theoperation 308). In some embodiments, if the maximum first depth issubstantially greater than the maximum second depth according to thecomparison (the operation 308), a position of the second jig 106 havingthe maximum first depth is defined as a center 106 c of the second jig106. In some embodiments, the center 106 c of the second jig 106 havingthe maximum first depth is an exact center of the second jig 106.

In some embodiments, a center of the sputtering target 102 can bedetermined based on the center 106 c of the second jig 106 having themaximum first depth. The center of the sputtering target 102 isvertically aligned with the center 106 c of the second jig 106. In someembodiments, a position of the second jig 106 having the maximum firstdepth is recorded. In some embodiments, a coordinate of the position ofthe second jig 106 is obtained and recorded. In some embodiments, aposition of the center of the sputtering target 102 is verticallyaligned with the position of the second jig 106. In some embodiments, acoordinate of the position of the center of the sputtering target 102 isobtained and recorded.

In some embodiments, if the maximum first depth is substantially lessthan the maximum second depth according to the comparison (the operation308), the operations 305, 306, 307 and 308 are repeated. In someembodiments, after the comparison (the operation 308), a third area ofthe second jig 106 is defined. In some embodiments, the third area ofthe second jig 106 is defined around the maximum second depth of thesecond jig 106. In some embodiments, the first area of the second jig106 and the second area of the second jig 106 are substantially the sameas each other. In some embodiments, the second area of the second jig106 is substantially larger than the first area of the second jig 106.In some embodiments, the definition of the third area of the second jig106 is similar to the operation 305.

In some embodiments, after defining the third area of the second jig106, several third depths within the third area of the second jig 106are measured. In some embodiments, the third depths are measured by aprobe. The third depths are obtained by probing several points withinthe third area of the second jig 106. In some embodiments, the thirddepths are recorded. In some embodiments, the measurement of the thirddepths is similar to the operation 306.

In some embodiments, after the measurement of the third depths, amaximum third depth among the third depths is derived. In someembodiments, the maximum third depth is determined after the measurementof the third depths. In some embodiments, a position of the second jig106 having the maximum third depth is also derived. In some embodiments,the maximum third depth is recorded. In some embodiments, the derivingof the maximum third depth is similar to the operation 307.

In some embodiments, after deriving the maximum third depth, the maximumthird depth is compared with the maximum second depth. In someembodiments, the comparison can determine if a maximum depth of thesecond jig 106 was found. In some embodiments, the comparison is similarto the operation 308.

In some embodiments, if the maximum third depth is substantially lessthan the maximum second depth according to the comparison, a position ofthe second jig 106 having the maximum second depth is defined as acenter 106 c of the second jig 106. In some embodiments, the center 106c of the second jig 106 having the maximum second depth is an exactcenter of the second jig 106.

In some embodiments, a center of the sputtering target 102 can bedetermined based on the center 106 c of the second jig 106 having themaximum second depth. The center of the sputtering target 102 isvertically aligned with the center 106 c of the second jig 106. In someembodiments, a position of the second jig 106 having the maximum seconddepth is recorded. In some embodiments, a coordinate of the position ofthe second jig 106 is obtained and recorded. In some embodiments, aposition of the center of the sputtering target 102 is verticallyaligned with the position of the second jig 106. In some embodiments, acoordinate of the position of the center of the sputtering target 102 isobtained and recorded.

In some embodiments, if the maximum third depth is substantially greaterthan the maximum second depth according to the comparison, theoperations 305, 306, 307 and 308 are repeated again. In someembodiments, the operations are terminated if a maximum depth of thesecond jig 106 was found.

In some embodiments, a method includes providing a jig including apredetermined center and a magnetron installed on the jig; rotating themagnetron and obtaining a measured first magnetic flux density at thepredetermined center of the jig; defining a first area of the magnetronbased on the measured first magnetic flux density; rotating themagnetron and measuring a plurality of second magnetic flux densitieswithin the first area of the magnetron; deriving a measured secondmagnetic flux density among the plurality of second magnetic fluxdensities; comparing the measured second magnetic flux density with apredetermined threshold; and performing an operation based on thecomparison.

In some embodiments, the performance of the operation includes defininga center of the magnetron having the minimum second magnetic fluxdensity; deriving a position of the center of the magnetron; moving aprobe to the position of the center of the magnetron. In someembodiments, the measured second magnetic flux density is equal to orsubstantially less than the predetermined threshold. In someembodiments, the center of the magnetron is vertically aligned with ordeviated from the predetermined center of the jig. In some embodiments,a dimension of the first area of the magnetron is substantiallyproportional to a magnitude of the measured first magnetic flux density.

In some embodiments, the performance of the operation includes defininga second area of the magnetron based on the measured second magneticflux density; rotating the magnetron and measuring a plurality of thirdmagnetic flux densities within the second area of the magnetron;deriving a measured third magnetic flux density among the plurality ofthird magnetic flux densities; comparing the measured third magneticflux density with the predetermined threshold. In some embodiments, theperformance of the operation further includes defining a center of themagnetron having the minimum third magnetic flux density; deriving aposition of the center of the magnetron; moving a probe to the positionof the center of the magnetron.

In some embodiments, the measured third magnetic flux density is equalto or substantially less than the predetermined threshold. In someembodiments, the center of the magnetron is vertically aligned with ordeviated from the predetermined center of the jig. In some embodiments,a dimension of the second area of the magnetron is substantiallyproportional to a magnitude of the measured second magnetic fluxdensity. In some embodiments, the second area of the magnetron issubstantially larger than, smaller than or equal to the first area ofthe magnetron.

In some embodiments, a method includes providing a jig including apredetermined center and a sputtering target installed on the jig;defining a first area of the jig around the predetermined center;measuring a plurality of first depths within the first area of the jig;deriving a maximum first depth among the plurality of first depths;defining a second area of the jig around the maximum first depth of thejig; measuring a plurality of second depths within the second area ofthe jig; deriving a maximum second depth among the plurality of seconddepths; comparing the maximum first depth with the maximum second depth;and performing an operation based on the comparison.

In some embodiments, the first area of the jig is substantially greaterthan the second area of the jig. In some embodiments, the maximum firstdepth is substantially greater than the maximum second depth. In someembodiments, the performance of the operation includes recording aposition of the jig having the maximum first depth; defining a center ofthe sputtering target vertically aligned with the position of the jighaving the maximum first depth. In some embodiments, the maximum firstdepth is substantially less than the maximum second depth.

In some embodiments, the performance of the operation includes defininga third area of the jig around the maximum second depth of the jig;measuring a plurality of third depths within the third area of the jig;deriving a maximum third depth among the plurality of third depths;comparing the maximum third depth with the maximum second depth;recording a position of the jig having the maximum second depth;defining a center of the sputtering target vertically aligned with theposition of the jig having the maximum second depth. In someembodiments, the maximum third depth is substantially less than themaximum second depth.

In some embodiments, a method includes providing a magnetron having anestimated center; rotating the magnetron and obtaining a measured firstmagnetic flux density at the estimated center; defining an area of themagnetron around the estimated center; rotating the magnetron andmeasuring a plurality of second magnetic flux densities within the areaof the magnetron; deriving a measured second magnetic flux density amongthe plurality of second magnetic flux densities; comparing the measuredsecond magnetic flux density with a predetermined threshold; anddefining a center of the magnetron based on the comparison.

In some embodiments, the method further includes expanding the area ofthe magnetron; rotating the magnetron and measuring a plurality of thirdmagnetic flux densities within the expanded area of the magnetron;deriving a measured third magnetic flux density among the plurality ofthird magnetic flux densities; comparing the measured third magneticflux density with the predetermined threshold.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A method, comprising: providing a jig including a predeterminedcenter and a magnetron installed on the jig; rotating the magnetron andobtaining a measured first magnetic flux density at the predeterminedcenter of the jig; defining a first area of the magnetron based on themeasured first magnetic flux density; rotating the magnetron andmeasuring a plurality of second magnetic flux densities within the firstarea of the magnetron; deriving a measured second magnetic flux densityamong the plurality of second magnetic flux densities; comparing themeasured second magnetic flux density with a predetermined threshold;and performing an operation based on the comparison.
 2. The method ofclaim 1, wherein the performance of the operation includes: defining acenter of the magnetron having the minimum second magnetic flux density;deriving a position of the center of the magnetron; moving a probe tothe position of the center of the magnetron.
 3. The method of claim 2,wherein the measured second magnetic flux density is equal to orsubstantially less than the predetermined threshold.
 4. The method ofclaim 2, wherein the center of the magnetron is vertically aligned withor deviated from the predetermined center of the jig.
 5. The method ofclaim 1, wherein a dimension of the first area of the magnetron issubstantially proportional to a magnitude of the measured first magneticflux density.
 6. The method of claim 1, wherein the performance of theoperation includes: defining a second area of the magnetron based on themeasured second magnetic flux density; rotating the magnetron andmeasuring a plurality of third magnetic flux densities within the secondarea of the magnetron; deriving a measured third magnetic flux densityamong the plurality of third magnetic flux densities; comparing themeasured third magnetic flux density with the predetermined threshold.7. The method of claim 6, wherein the performance of the operationfurther includes: defining a center of the magnetron having the minimumthird magnetic flux density; deriving a position of the center of themagnetron; moving a probe to the position of the center of themagnetron.
 8. The method of claim 7, wherein the measured third magneticflux density is equal to or substantially less than the predeterminedthreshold.
 9. The method of claim 6, wherein the center of the magnetronis vertically aligned with or deviated from the predetermined center ofthe jig.
 10. The method of claim 6, wherein a dimension of the secondarea of the magnetron is substantially proportional to a magnitude ofthe measured second magnetic flux density.
 11. The method of claim 6,wherein the second area of the magnetron is substantially larger than,smaller than or equal to the first area of the magnetron.
 12. A method,comprising: providing a jig including a predetermined center and asputtering target installed on the jig; defining a first area of the jigaround the predetermined center; measuring a plurality of first depthswithin the first area of the jig; deriving a maximum first depth amongthe plurality of first depths; defining a second area of the jig aroundthe maximum first depth of the jig; measuring a plurality of seconddepths within the second area of the jig; deriving a maximum seconddepth among the plurality of second depths; comparing the maximum firstdepth with the maximum second depth; and performing an operation basedon the comparison.
 13. The method of claim 12, wherein the first area ofthe jig is substantially greater than the second area of the jig. 14.The method of claim 12, wherein the maximum first depth is substantiallygreater than the maximum second depth.
 15. The method of claim 14,wherein the performance of the operation includes: recording a positionof the jig having the maximum first depth; defining a center of thesputtering target vertically aligned with the position of the jig havingthe maximum first depth.
 16. The method of claim 12, wherein the maximumfirst depth is substantially less than the maximum second depth.
 17. Themethod of claim 16, wherein the performance of the operation includes:defining a third area of the jig around the maximum second depth of thejig; measuring a plurality of third depths within the third area of thejig; deriving a maximum third depth among the plurality of third depths;comparing the maximum third depth with the maximum second depth;recording a position of the jig having the maximum second depth;defining a center of the sputtering target vertically aligned with theposition of the jig having the maximum second depth.
 18. The method ofclaim 17, wherein the maximum third depth is substantially less than themaximum second depth.
 19. A method, comprising: providing a magnetronhaving an estimated center; rotating the magnetron and obtaining ameasured first magnetic flux density at the estimated center; definingan area of the magnetron around the estimated center; rotating themagnetron and measuring a plurality of second magnetic flux densitieswithin the area of the magnetron; deriving a measured second magneticflux density among the plurality of second magnetic flux densities;comparing the measured second magnetic flux density with a predeterminedthreshold; and defining a center of the magnetron based on thecomparison.
 20. The method of claim 19, further comprising: expandingthe area of the magnetron; rotating the magnetron and measuring aplurality of third magnetic flux densities within the expanded area ofthe magnetron; deriving a measured third magnetic flux density among theplurality of third magnetic flux densities; comparing the measured thirdmagnetic flux density with the predetermined threshold.